Substrate size 4-8 inches
Substrate temperature RT-400 degrees, control accuracy: ±1℃
Source container temperature RT-200 oC; ±1 oC
Vacuum reaction chamber 316 stainless steel chamber or imported anodized aluminum
Precursor delivery system 4-8 channels (optional liquid source, solid source and gas source)
Deposition mode fast mode, high aspect ratio mode and professional doping mode
Plasma power 500W
Plasma generation method CCP
Plasma gas O2, N2, NH3, H2

Optional
Optional ozone generator, in-situ film thickness measurement, fume hood, glove box, pump front adsorption (thermal adsorption, chemical adsorption and dust adsorption, etc.), cold trap, exhaust gas processor, etc.