Introduction of TALD atomic layer deposition system:
Thermal Atomic Layer Deposition System is a single-wafer deposition system specially designed for scientific research and small-scale experiments of industrialization .The electric of the system completely accords with the CE criterion. , it's widely used in the fields of micro-electronic,nano material, optical film, solar battery etc.

Product benefit
Advanced software controlling system: many functions are integrated in the system,including technological formulation, parameter setting, popedom stetting ,interlocking alarming ad state supervisory control.

ALD Films
Elementary substance: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe…
Nitride: TiN, SiN, AlN, TaN, ZrN, HfN, WN …
Oxide: TiO2, HfO2, SiO2, ZnO, ZrO2, Al2O3, La2O3, SnO2…
Others: GaAs, AlP, InP, GaP, InAs, LaHfxOy, SrTiO3,SrTaO6…

Application fields of ALD
High-k gate oxides
Storage capacitor dielectrics
High aspect ratio diffusion barriers for Cu interconnects
Pinhole-free passivation layers for OLEDs and polymers
Highly conformal coatings for MEMS applications
Coating of nanoporous structures
Doping of special fiber
Solar battery
Flat plate display
Optical thin-film
Nano film of other special structure

Technical parameters of TALD atomic layer deposition system:
Wafer Dimension
8 inch and below
Wafer temperature
RT-400ºC,Controlling precision ±0.1ºC
Number of precursor
Three precursor lines,optional more lines
Temperature of precursor lines
RT-200ºC,Controlling precision ±0.1ºC
Temperature of source bottles
RT-200ºC,Controlling precision ±0.1ºC
ALD Valve
Swagelok ALD swift valve
Background vacuum
<5*10-3Torr
Gas carrier system
N2 or Ar
Growing mode
Consecutive or interval deposition mode
Controlling system
PLC plus touch screen or display
Power supply
50-60Hz,220V/20A AC
Depositon Heterogeneity
Heterogeneity<±1%
Dimension of the instrument
600mmx600mmx1100mm