Introduction of Atomic Layer Deposition System:
CY-KMT-400 IV Atomic Layer Deposition System is specially developed for industrial large-scale production with four chambers. Equipped with standard deposition process configuration, the system satisfies the demand of industry application.

Product benefit
Advanced software controlling system: many functions are integrated in the system, including technological formulation, parameter setting, popedom stetting, inter locking alarming ad state supervisory control.

ALD Films
Elementary substance: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe…
Nitride: TiN, SiN, AlN, TaN, ZrN, HfN, WN …
Oxide: TiO2, HfO2, SiO2, ZnO, ZrO2, Al2O3, La2O3, SnO2…
Others: GaAs, AlP, InP, GaP, InAs, LaHfxOy, SrTiO3,SrTaO6…
Application fields of ALD
High-k gate oxides
Storage capacitor dielectrics
High aspect ratio diffusion barriers for Cu interconnects
Pinhole-free passivation layers for OLEDs and polymers
Highly conformal coatings for MEMS applications
Coating of nanoporous structures
Doping of special fiber
Solar battery
Flat plate display
Optical thin-film
Nano film of other special structure

Technical parameters of Atomic Layer Deposition System:
Wafer Dimension 8 inch and below
Wafer temperature RT-500ºC,Controlling precision ±0.1ºC
Number of precursor Two precursor lines,optional more lines
Temperature of precursor lines RT-200ºC,Controlling precision ±0.1ºC
ALD Valve Swagelok ALD swift valve
Background vacuum <5*10-3Torr
Gas carrier system N2 or Ar
Growing mode Consecutive or interval deposition mode
Controlling system PLC plus touch screen or display
Power supply 50-60Hz,220V/20A AC
Depositon Heterogeneity Inside ship<±1%,between chip <±1.5%
Thoughput capacity 4 chambers,400 wafers per chamber
Process time 5 s/cycle
Dimension of the instrument 3000mmx800mmx2400mm