Introduction of PECVD coater:

CY-PECVD-450 chemical vapor deposition adopts plasma enhanced chemical vapor deposition technology, which can use high-energy plasma to promote the reaction process, effectively increase the reaction speed and reduce the reaction temperature.

It is suitable for depositing thin films of silicon nitride, amorphous silicon and microcrystalline silicon on different substrates such as optical glass, silicon, quartz and stainless steel. It has good film-forming quality, less pinholes and is not easy to crack. It is suitable for the preparation of amorphous silicon and microcrystalline silicon thin film solar cell devices. It can be widely used in the scientific research and small batch preparation of thin film materials in Colleges and universities and scientific research institutes.


Technical parameters of PECVD coater:

Type

CY-PECVD-450

Vacuum chamber

front opening door,φ300mm X 300mm,stainless steel

viewing window:φ100mm with baffle

Vacuum pump set

Front stage pump: rotary vane pump pumping speed is 1.1L/s

Secondary pump: Turbo molecular pump pumping speed 600L/s

Limiting vacuum

10-6Pa

10-4Pa(Within 30 minutes)

Vacuum(deposition)

0.133~133Pa,adjusted according to the process

RF power

13.56MHz,500W (automatch)

Flow control

mass flowmeter(default Ar,0~200sccm)

Dimensions

1100mm x 800mm x1100mm