Technical parameters of Plasma atomic layer system:

Substrate size 4-8 inches
Substrate temperature RT-400 degrees, control accuracy: ±1ºC
Source container temperature RT-200 oC; ±1 oC
Vacuum reaction chamber 316 stainless steel chamber
Precursor delivery system 4-8 channels (optional liquid source, solid source and gas source)
Deposition mode fast mode, high aspect ratio mode and professional doping mode
Plasma power 500W
Plasma generation method ICP
Plasma gas O2, N2, NH3, H2