Application of atomic layer deposition system:
It can be used in the preparation of conventional oxide thin films of elemental copper and nickel and TiN;
Can be connected to other vacuum devices such as glove boxes;
Upgradeable CCP system;
Ozone system can be installed, mainly used for silicon oxide, iron oxide and other processes

Product benefit
Advanced software controlling system: many functions are integrated in the system,including technological formulation, parameter setting, popedom stetting ,interlocking alarming ad state supervisory control.

ALD Films
Elementary substance: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe…
Nitride: TiN, SiN, AlN, TaN, ZrN, HfN, WN …
Oxide: TiO2, HfO2, SiO2, ZnO, ZrO2, Al2O3, La2O3, SnO2…
Others: GaAs, AlP, InP, GaP, InAs, LaHfxOy, SrTiO3,SrTaO6…

Application fields of ALD
High-k gate oxides
Storage capacitor dielectrics
High aspect ratio diffusion barriers for Cu interconnects
Pinhole-free passivation layers for OLEDs and polymers
Highly conformal coatings for MEMS applications
Coating of nanoporous structures
Doping of special fiber
Solar battery
Flat plate display
Optical thin-film
Nano film of other special structure

Technical parameters of atomic layer deposition system:
Sample stage size 4 inches
Substrate heating temperature RT-300 oC; ±1 oC
Number of precursors 2
Precursor source pipeline temperature RT-200 oC; ±1 oC
Source container temperature RT-200 oC; ±1 oC
Deposition mode Quick mode or high aspect ratio mode